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| Ordering number : ENN7990 2SA2126 2SA2126 Applications * PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC converter, relay drivers, lamp drivers, motor drivers. Features * * * * Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings -50 -50 -50 --6 --3 --6 --600 0.8 15 150 --55 to +150 Unit V V V V A A mA W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--100mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz 200 390 24 Conditions Ratings min typ max --1 --1 560 MHz pF Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21505EA TS IM TB-00000214 No.7990-1/4 2SA2126 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1A, IB=--50mA IC=--2A, IB=--100mA IC=--2A, IB=--100mA IC=--10A, IE=0 IC=--100A, RBE=0 IC=--1mA, RBE= IE=--10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --50 --6 30 230 18 Ratings min typ --135 --260 --0.96 max --270 --520 --1.2 Unit mV mV V V V V V ns ns ns Package Dimensions unit : mm 2045B 6.5 5.0 4 Package Dimensions unit : mm 2044B 2.3 1.5 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 0.6 1 2 3 0.5 1 0.6 7.5 0.8 2 3 2.5 1.2 0.85 0.5 1.2 0.85 0.7 5.5 7.0 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1.2 0 `0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit PW=20s D.C.1% INPUT VR 50 RB + 100F VBE=5V + 470F VCC= --25V IB1 IB2 OUTPUT RL --10IB1=10IB2= IC= --1A --5.0 --4.5 IC -- VCE mA A --250 --200m A 50m --1 mA --100 --50mA --3.0 IC -- VBE VCE= --2V Collector Current, IC -- A --3.5 --3.0 --2.5 --2.0 --1.5 Collector Current, IC -- A --4.0 --2.5 --2.0 5C Ta= 7 0 --0.2 --0.4 --0.6 --1.0 --0.5 0 --20mA --10mA --1.5 --5mA --1.0 --0.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 IB=0 --1.8 --2.0 --0.8 --25 C --1.0 25 C --1.2 IT07643 Collector-to-Emitter Voltage, VCE -- V IT07642 Base-to-Emitter Voltage, VBE -- V No.7990-2/4 2SA2126 1000 7 5 hFE -- IC VCE= --2V Gain-Bandwidth Product, fT -- MHz 1000 7 5 fT -- IC VCE= --10V DC Current Gain, hFE Ta=75C 25C --25C 3 2 3 2 100 7 5 3 --0.01 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 100 5 7 --10 IT07644 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Cob -- VCB Collector Current, IC -- A --1.0 7 5 7 --10 IT07645 VCE(sat) -- IC f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 Output Capacitance, Cob -- pF 7 5 3 2 5 3 --0.1 7 5 3 2 2 = Ta C 75 --2 C 25 C 5 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT07646 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Base Voltage, VCB -- V 3 2 VCE(sat) -- IC Collector Current, IC -- A 3 5 7 --10 IT07647 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 3 2 --0.1 7 5 3 2 --1.0 Ta= --25C 7 Ta= 5C 25 C C 5 --2 7 75C 5 25C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A --10 7 5 IT07648 ASO Collector Current, IC -- A 0.9 0.8 5 7 --10 IT07649 PC -- Ta ICP= --6A IC= --3A 50 <10s Collector Current, IC -- A 10 DC Collector Dissipation, PC -- W 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 s 10 0 0m s 10 m s 1m 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 s s DC ope op No era he tio at n( sin rat ion Ta k =2 =2 (Tc 5 C) 5C ) --0.01 --0.1 Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT07650 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C IT07651 No.7990-3/4 2SA2126 16 15 14 PC -- Tc Collector Dissipation, PC -- W 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT07652 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.7990-4/4 |
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